HGTP12N60A4D

HGTP12N60A4D IGBT

Descrizione

• IGBT, TO-220
• Tipo transistor:IGBT
• DC Collector Current:54A
• Collector Emitter Voltage Vces:2.7V
• Power Dissipation Pd:167W
• Collector Emitter Voltage V(br)ceo:600V
• Operating Temperature Range:Da -55°C a +150°C
• Transistor Case Style:TO-220AB
• N. of Pins:3
• SVHC:No SVHC (15-Dec-2010)
• Current Ic Continuous a Max:54A
• Fall Time tf:18ns
• Full Power Rating Temperature:25°C
• N. of Transistors:1
• Package / Case:TO-220AB
• Power Dissipation Max:167W
• Power Dissipation Pd:167W
• Pulsed Current Icm:96A
• Tempo di salita:8ns
• Tipo terminazione::Foro passante
• Polarità transistor:Canale N
• Voltage Vces:600V